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- W2035819204 abstract "The chemically sensitive (200) diffraction in the dark field (DF) mode of transmission electron microscopy has been used to detect, identify, and evaluate the composition of the parasitic interlayer at the GaAs-on-InGaP interface in metallorganic vapor-phase epitaxy (MOVPE) heterostructures. The latter were grown at with no growth interruption. The composition range determined by (200) DF was further refined by using the X-ray diffraction result that the interlayer has a negative lattice mismatch to GaAs. The parasitic interlayer can be either or with and . intermixing and In segregation are assumed to drive the formation of the interlayer. The low In content in the quaternary is ascribed to the reduced In segregation at . In segregation is likely favored by the tensile strain associated with the interlayer in its process of growth." @default.
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- W2035819204 date "2009-01-01" @default.
- W2035819204 modified "2023-10-16" @default.
- W2035819204 title "Parasitic Interlayer at the GaAs-on-InGaP Interface in MOVPE InGaP∕GaAs: A Study by the Chemically Sensitive (200) Diffraction" @default.
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- W2035819204 doi "https://doi.org/10.1149/1.3111028" @default.
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