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- W2035832020 abstract "Silicon carbide was chemically deposited on the (111) surface of silicon single crystal and isotropic pyrolytic graphite by using methyltrichlorosilane as source gas. The deposits were examined by X-ray diffractometry and electron scanning microscopy (SEM) and found to be composed of β-SiC, free Si and a trace of 2H-SiC. The coatings yielded the less free silicon in it using graphite as substrate and at a higher argon flow rate. X-ray analysis indicated that the degree of preferred orientation varied with the kinds of substrate materials and the amount of argon added. A film with ‹111› preferred orientation was obtained on silicon substrate comparing to the ‹220› orientation on the graphite substrate. Increasing the flow rate of argon led to decrease probability of the ‹111› orientation but enhance the ‹220› one on graphite substrate, whereas the deposition rate was greatly lowered by adding argon. The morphologies of deposits obtained by the CVD process was dependent on the input fraction of argon at 1400°C." @default.
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- W2035832020 date "1991-01-01" @default.
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- W2035832020 title "The Effect of Argon Addition on the Microstructure, Texture and Phases of Silicon Carbide Prepared by Chemical Vapor Deposition" @default.
- W2035832020 doi "https://doi.org/10.2109/jcersj.99.1175" @default.
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