Matches in SemOpenAlex for { <https://semopenalex.org/work/W2035866495> ?p ?o ?g. }
Showing items 1 to 76 of
76
with 100 items per page.
- W2035866495 endingPage "254" @default.
- W2035866495 startingPage "249" @default.
- W2035866495 abstract "GaInP grown lattice-matched to GaAs is a very attractive material system for application in heterojunction bipolar transistors (HBTs) due to its superior properties over the AlGaAs/GaAs system. In this paper, the etching characteristics of GaAs and GaInP using electron cyclotron resonance (ECR) plasma are reported. The high-density low ion energy plasma characteristic is beneficial for low-damage material processing. It was found that the GaAs and GaInP sidewall profile and surface morphology was greatly affected by the Cl2/Ar flow rates, with near vertical sidewall profiles obtained at low Cl2 and Ar flow rates of 10 sccm. Furthermore, the GaInP surface characteristic was very sensitive to Ar flow rate, with grass-like features observed at a flow rate of 40 sccm. Such features were absent at an Ar flow rate of 10 sccm, suggesting that high Ar flow retarded the etching by-product desorption. Increasing the DC self-bias from |20| to |70| V resulted in change of the GaInP sidewall profile from undercut to near-vertical characteristic along the (110) crystal plane. In the case of the GaInP/GaAs heterostructure, etching at |70| V DC self-bias results in a smoother GaAs surface after the top GaInP layer was etched. Optimised conditions for GaInP/GaAs heterostructure etching was established at Cl2/Ar 10:10 sccm, |70| V DC self-bias, 2.5 mtorr, 40°C and 200 W microwave power. The relatively slow etch rate of 7.2 nm/s gives good control for mesa etching in device fabrication processes. The resulting GaAs root-mean-square (RMS) surface roughness is 4 nm." @default.
- W2035866495 created "2016-06-24" @default.
- W2035866495 creator A5022998467 @default.
- W2035866495 date "2001-08-15" @default.
- W2035866495 modified "2023-09-26" @default.
- W2035866495 title "Study of GaAs and GaInP etching in Cl2/Ar electron cyclotron resonance plasma" @default.
- W2035866495 cites W1973362470 @default.
- W2035866495 cites W2032128171 @default.
- W2035866495 cites W2061453502 @default.
- W2035866495 cites W2084290180 @default.
- W2035866495 cites W2123099421 @default.
- W2035866495 cites W2132506192 @default.
- W2035866495 doi "https://doi.org/10.1016/s0040-6090(01)01139-7" @default.
- W2035866495 hasPublicationYear "2001" @default.
- W2035866495 type Work @default.
- W2035866495 sameAs 2035866495 @default.
- W2035866495 citedByCount "5" @default.
- W2035866495 countsByYear W20358664952012 @default.
- W2035866495 countsByYear W20358664952013 @default.
- W2035866495 crossrefType "journal-article" @default.
- W2035866495 hasAuthorship W2035866495A5022998467 @default.
- W2035866495 hasConcept C100460472 @default.
- W2035866495 hasConcept C107187091 @default.
- W2035866495 hasConcept C113196181 @default.
- W2035866495 hasConcept C121332964 @default.
- W2035866495 hasConcept C130472188 @default.
- W2035866495 hasConcept C145148216 @default.
- W2035866495 hasConcept C171250308 @default.
- W2035866495 hasConcept C172120300 @default.
- W2035866495 hasConcept C175361016 @default.
- W2035866495 hasConcept C178790620 @default.
- W2035866495 hasConcept C185592680 @default.
- W2035866495 hasConcept C192562407 @default.
- W2035866495 hasConcept C2779227376 @default.
- W2035866495 hasConcept C43617362 @default.
- W2035866495 hasConcept C49040817 @default.
- W2035866495 hasConcept C62520636 @default.
- W2035866495 hasConcept C79794668 @default.
- W2035866495 hasConceptScore W2035866495C100460472 @default.
- W2035866495 hasConceptScore W2035866495C107187091 @default.
- W2035866495 hasConceptScore W2035866495C113196181 @default.
- W2035866495 hasConceptScore W2035866495C121332964 @default.
- W2035866495 hasConceptScore W2035866495C130472188 @default.
- W2035866495 hasConceptScore W2035866495C145148216 @default.
- W2035866495 hasConceptScore W2035866495C171250308 @default.
- W2035866495 hasConceptScore W2035866495C172120300 @default.
- W2035866495 hasConceptScore W2035866495C175361016 @default.
- W2035866495 hasConceptScore W2035866495C178790620 @default.
- W2035866495 hasConceptScore W2035866495C185592680 @default.
- W2035866495 hasConceptScore W2035866495C192562407 @default.
- W2035866495 hasConceptScore W2035866495C2779227376 @default.
- W2035866495 hasConceptScore W2035866495C43617362 @default.
- W2035866495 hasConceptScore W2035866495C49040817 @default.
- W2035866495 hasConceptScore W2035866495C62520636 @default.
- W2035866495 hasConceptScore W2035866495C79794668 @default.
- W2035866495 hasIssue "1-2" @default.
- W2035866495 hasLocation W20358664951 @default.
- W2035866495 hasOpenAccess W2035866495 @default.
- W2035866495 hasPrimaryLocation W20358664951 @default.
- W2035866495 hasRelatedWork W1980441246 @default.
- W2035866495 hasRelatedWork W1983443637 @default.
- W2035866495 hasRelatedWork W1992919011 @default.
- W2035866495 hasRelatedWork W1995804031 @default.
- W2035866495 hasRelatedWork W2001663163 @default.
- W2035866495 hasRelatedWork W2030003827 @default.
- W2035866495 hasRelatedWork W2068046537 @default.
- W2035866495 hasRelatedWork W2245373849 @default.
- W2035866495 hasRelatedWork W2360999388 @default.
- W2035866495 hasRelatedWork W2762634485 @default.
- W2035866495 hasVolume "394" @default.
- W2035866495 isParatext "false" @default.
- W2035866495 isRetracted "false" @default.
- W2035866495 magId "2035866495" @default.
- W2035866495 workType "article" @default.