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• W2036073146 abstract "We prepared hydrogenated silicon thin films at various gas pressures and gas flow rates by hot-wire chemical vapor deposition (HW-CVD) and investigated the influence of these parameters on their structural properties using X-ray diffraction and Raman spectroscopy. Deposition rate showed a maximum at gas pressure of 500 mTorr and increased with increasing the silane gas flow rate F(SiH4). Gas pressure at which transition from amorphous to microcrystalline occurred increased with increasing the F(SiH4). The mean crystallite size and crystalline volume fraction increased monotonously with the increase in the gas pressure and the decrease in the F(SiH4)." @default.
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• W2036073146 date "2006-04-01" @default.
• W2036073146 modified "2023-09-27" @default.
• W2036073146 title "Structure of amorphous and microcrystalline silicon thin films prepared at various gas pressures and gas flow rates by hot-wire chemical vapor deposition" @default.
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• W2036073146 doi "https://doi.org/10.1016/j.tsf.2005.07.134" @default.
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