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• W2036191052 abstract "We investigated the relationship between the minimum noise figure ( N F min ) and electron confinement in the channel of the two-mode channel field-effect transistor (TMT) which we developed previously, by comparing the TMT and an AlGaAs/InGaAs pseudomorphic high electron mobility transistor (P-HEMT) with a 10 nm InGaAs channel layer. The TMT had a superior measured N F min and stronger electron confinement in a low-drain-current ( I ds ) bias condition than the P-HEMT. The superior measured N F min of the TMT resulted in a smaller fitting factor ( K f ) in Fukui's noise equation than that of the P-HEMT. We demonstrated that the stronger electron confinement of the TMT leads to an increase in the correlation coefficient between drain noise current and gate-induced noise current and results in a smaller K f , which plays an important role in the reduction of N F min ." @default.
• W2036191052 created "2016-06-24" @default.
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• W2036191052 date "1995-03-01" @default.
• W2036191052 modified "2023-09-25" @default.
• W2036191052 title "Relationship between Low-Noise Performance and Electron Confinement in the Channel of Two-Mode Channel Field-Effect Transistors in a Low-Drain-Current Condition" @default.
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• W2036191052 doi "https://doi.org/10.1143/jjap.34.1483" @default.
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