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- W2036340206 abstract "We investigate the stability and electronic structure of 1×2 and 2×2 GaAs(001):Te and InAs(001):Te surfaces with different degrees of tellurium coverage (thetaTe = <img src=http:/img/fbpe/bjp/v29n4/a4414.gif alt=a4414.gif (106 bytes) align=absmiddle>, <img src=http:/img/fbpe/bjp/v29n4/a4412.gif alt=a4412.gif (100 bytes) align=absmiddle>, <img src=http:/img/fbpe/bjp/v29n4/a4434.gif alt=a4434.gif (104 bytes) align=absmiddle>, 1), by means of rst-principles pseudopotential calculations within density-functional theory. The adsorption stability decreases as the tellurium coverage increases. The adsorption on InAs(001) is more stable than on GaAs(001). As-Ga (or As-In) bonds for the uppermost As atoms are s²p² -like (nearly planar), while the Te bonds at the surfaces are sp³-like. The hetero-dimers in thetaTe = <img src=http:/img/fbpe/bjp/v29n4/a4412.gif alt=a4412.gif (100 bytes) align=absmiddle> modify the character of GaAs(001):Te and InAs(001):Te surfaces resulting in a semiconductor structure." @default.
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- W2036340206 date "1999-12-01" @default.
- W2036340206 modified "2023-09-27" @default.
- W2036340206 title "Tellurium - modified surface states of GaAs(001) and InAs(001)" @default.
- W2036340206 doi "https://doi.org/10.1590/s0103-97331999000400045" @default.
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