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- W2036452765 abstract "We have demonstrated a correlation between post-metal etch ashrate performance and yield on CMOS technology integrated circuit (IC) product wafers etched at metal etch with high polymer producing recipes. This paper presents details of high polymer forming metal etch processes and two novel techniques developed for quantifying the amount of polymer formed during etch. Data are presented which illustrate a correlation between electrical test yield, post metal etch ashrates and the amount of polymer formed during the etch. Finally, recognizing that the metal etch recipe/ashrate correlation does not explain all forms of yield loss due to leakage, we suggest other areas for investigation." @default.
- W2036452765 created "2016-06-24" @default.
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- W2036452765 date "1996-09-13" @default.
- W2036452765 modified "2023-09-23" @default.
- W2036452765 title "<title>Yield effects of interactions between high polymer forming metal etch processes and postetch ash processes</title>" @default.
- W2036452765 doi "https://doi.org/10.1117/12.250903" @default.
- W2036452765 hasPublicationYear "1996" @default.
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