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• W2036651832 abstract "We present a theoretical analysis of the formation of current filaments leading to the latch-up state that can occur during the turn-off process in a cell array of high-voltage (3.3 kV) trench insulated-gate bipolar transistors (trench IGBTs). Our investigations, based on self-consistent physical device simulations, aim at understanding the behavior of multiple cells, i.e. parallel cells as well as integrated structures, during overcurrent turnoff by studying the behavior of a representative single cell under identical conditions. With these insights we are able to analyse the latch-up mechanism itself as well as its consequences for the robustness of the device against latch-up. Furthermore, we gain an understanding of the formation of current filaments inside IGBT cells and their relation to device latch-up." @default.
• W2036651832 created "2016-06-24" @default.
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• W2036651832 date "2013-09-01" @default.
• W2036651832 modified "2023-09-25" @default.
• W2036651832 title "Analysis of the latch-up process and current filamentation in high-voltage trench-IGBT cell arrays" @default.
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• W2036651832 doi "https://doi.org/10.1109/sispad.2013.6650633" @default.
• W2036651832 hasPublicationYear "2013" @default.
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