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- W2036684174 abstract "Abstract In this paper, a systematic RF performance analysis of double-gate strained silicon (DGSS) nMOSFETs is presented. The analysis is focused upon impact of Germanium mole-fraction variation on RF performance of underlap engineered DGSS nMOSFET. The RF performance of the device is analysed as a function of intrinsic RF figure of merits (FOMs) including non-quasi static effects (NQS). The RF FOMs are represented by the intrinsic gate to source/drain capacitance (Cgs and Cgd) and resistance (Rgs and Rgd), the transport delay (τm), the intrinsic inductance (Lsd), the cut-off frequency (fT), and the maximum oscillation frequency (fMAX). The results of the study suggested a significant improvement in the device performance, up to 40% increase in Germanium mole fraction (χ)." @default.
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- W2036684174 date "2014-11-01" @default.
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- W2036684174 title "Impact of underlap and mole-fraction on RF performance of strained-Si/Si 1− x Ge x /strained-Si DG MOSFETs" @default.
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- W2036684174 doi "https://doi.org/10.1016/j.spmi.2014.09.008" @default.
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