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• W2036697329 abstract "The authors present neutral particle proximity lithography, a high resolution, parallel exposure technique where a broad beam of energetic neutral particles floods a stencil mask and transmitted beamlets transfer the mask pattern to resist on a substrate. It preserves the advantages of nanoscale penumbra, diffraction, and resist scattering of ion beam lithography (IBL) yet is intrinsically immune to charge accumulation on the mask and substrate. In a series of direct comparisons, involving insulating substrates, large proximity gaps, and ultrasmall features, the authors show that the use of neutral particles provides a simple method for completely eliminating the charging artifacts of IBL. They demonstrate the ability to print 8nm mask features with 5nm pattern fidelity. Exposure times are about 200s in poly(methyl methacrylate) resist." @default.
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• W2036697329 date "2008-11-01" @default.
• W2036697329 modified "2023-09-27" @default.
• W2036697329 title "Neutral particle proximity lithography: Noncontact nanoscale printing without charge-related artifacts" @default.
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• W2036697329 doi "https://doi.org/10.1116/1.2998765" @default.
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