Matches in SemOpenAlex for { <https://semopenalex.org/work/W2036698931> ?p ?o ?g. }
- W2036698931 endingPage "1389" @default.
- W2036698931 startingPage "1369" @default.
- W2036698931 abstract "The purpose of this article is to report on the recent developments on the gate dielectric formation on strained-Si/SiGe heterolayers. In the first part, growth of a high quality strained-Si layer on a relaxed, linear or step-graded SiGe buffer layer and SiGe-free strained-Si on Silicon-on-Insulator (SSOI) is briefly reviewed. Characterization results of strained-Si films using atomic force microscopy (AFM), transmission electron microscopy (TEM) and Raman spectroscopy are then presented. In the second part, the processing issues of gate dielectric formation on strained-Si films are critically examined and the thermal oxidation of strained-Si layers are discussed. Low thermal budget processing, such as rapid thermal oxidation (RTO) and low temperature microwave plasma oxidation and nitridation of strained-Si layers are discussed in the third part. Microwave plasma deposition of various high-k gate dielectrics, such as ZrO2, Ta2O5, and TiO2 on strained-Si, their electrical properties and the current conduction mechanisms are also discussed." @default.
- W2036698931 created "2016-06-24" @default.
- W2036698931 creator A5002567391 @default.
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- W2036698931 creator A5018981088 @default.
- W2036698931 creator A5036261096 @default.
- W2036698931 creator A5080095202 @default.
- W2036698931 date "2004-08-01" @default.
- W2036698931 modified "2023-10-18" @default.
- W2036698931 title "Gate dielectrics on strained-Si/SiGe heterolayers" @default.
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