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- W2036706705 abstract "This paper describes a method using both reduced pressure chemical vapor deposition (RPCVD) and ultrahigh vacuum chemical vapor deposition (UHVCVD) to grow a thin compressively strained Ge film. As the first step, low temperature RPCVD was used to grow a fully relaxed SiGe virtual substrate layer at 500 ◦ C with a thickness of 135 nm, surface roughness of 0.3 nm, and Ge content of 77%. Then, low temperature UHVCVD was used to grow a high quality strained pure Ge film on the SiGe virtual substrate at 300 ◦ C with a thickness of 9 nm, surface roughness of 0.4 nm, and threading dislocation density of ∼10 5 cm −2 . Finally, a very thin strained Si layer of 1.5-2 nm thickness was grown on the Ge layer at 550 ◦ C for the purpose of passivation and protection. The whole epitaxial layer thickness is less than 150 nm. Due to the low growth temperature, the two-dimensional layer-by-layer growth mode dominates during the epitaxial process, which is a key factor for the growth of high quality strained Ge films." @default.
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- W2036706705 date "2009-09-01" @default.
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- W2036706705 title "Fabrication of strained Ge film using a thin SiGe virtual substrate" @default.
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- W2036706705 doi "https://doi.org/10.1088/1674-4926/30/9/093005" @default.
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