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- W2036984554 abstract "The transient behaviour of intrinsic gettering (IG) is clarified for the first time on the silicon wafer with surface defects introduced by the prc-annealing in wet 0, at 1140 °C. It is found that surface defects introduced by the pre-annealing in O2 at higher temperatures, which are speculated to be heavy metal clusters in this work, migrate to an inner region and are gettered by inner defects during the post-annealing at lower temperatures such as 950 °C. These results suggest that surface defects introduced by pre-oxidation process can be gettered during device heat treatment at comparatively lower temperatures if microdefect nuclei are suitably given. Das nichtstationäre Verhalten der Intrinsic-Getterung (IG) wird erstmalig geklärt an Silizium-scheiben mit Oberflächendefekten, die durch die Vortemperung in feuchtem O2 bei 1140 °C eingeführt werden. Es wird gefunden, daß Oberflächendefekte, die durch eine Vortemperung in O2, bei höheren Temperaturen eingefiihrt werden und von denen in dieser Arbeit angenommen wird, daß sie Schwer-metallcluster sind, in cinen inneren Bereich wandern und durch innere Defekte während der Nach-temperung bei tieferen Temperaturen, wie etwa 950 °C gegettert werden. Diese Ergebnisse zcigen, daß Oberflachendefekte, die durch einen Vor-Oxydationsprozeß erzeugt werden, während einer Wilrmebehandlung bei vcrglcichsweise niedrigcren Temperaturen gegettert werden konnen, wenn geeignete Mikrodefektkeime gebildet werden." @default.
- W2036984554 created "2016-06-24" @default.
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- W2036984554 date "1983-09-16" @default.
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- W2036984554 title "Transient Behaviour of Intrinsic Gettering in CZ Silicon Wafers" @default.
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- W2036984554 doi "https://doi.org/10.1002/pssa.2210790122" @default.
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