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• W2037094564 abstract "We proposed a bilayered etch-stop layer (BiESL) composed of Al 2 O 3 /SiO 2 for the high-mobility oxide thin-film transistor (TFT) fabricated with low-resistivity Cu electrodes. The In–Ga–Zn–O TFT employing the BiESL showed no marked degradation in its high mobility and transfer characteristics even after the conventional passivation process using SiN x film, which causes hydrogen incorporation into the active channel. Excellent barrier properties of atomic-layer-deposited Al 2 O 3 film could provide the feasibility for the direct deposition of organic planarization film without the need for an extra passivation layer. The proposed BiESL structure was also suggested to be compatible with the simple patterning process of Cu electrodes." @default.
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• W2037094564 date "2013-09-20" @default.
• W2037094564 modified "2023-10-13" @default.
• W2037094564 title "Bilayered Etch-Stop Layer of Al₂O₃/SiO₂for High-Mobility In–Ga–Zn–O Thin-Film Transistors" @default.
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• W2037094564 doi "https://doi.org/10.7567/jjap.52.100209" @default.
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