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• W2037227699 abstract "Successful sputtering deposition of aluminum-doped zinc oxide (ZnO:Al) thin films was carried out using the helicon-wave excited plasma (HWP). The films deposited on soda-lime glass substrates exhibited a dominant [0001]-oriented growth with a small full-width at half maximum (0.32 deg) of the (0002) x-ray diffraction peak. The film deposited at 300 °C showed a resistivity of 5×10−4 Ω cm without any additional annealings. High optical transmittance greater than 80% was achieved in the visible spectral wavelengths. Similar to the success of the laser ablation technique, the HWP-sputtering method is expected to be developed as one of the versatile techniques for the preparation of semiconductor thin films." @default.
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• W2037227699 date "1998-01-12" @default.
• W2037227699 modified "2023-09-23" @default.
• W2037227699 title "Use of a helicon-wave excited plasma for aluminum-doped ZnO thin-film sputtering" @default.
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• W2037227699 doi "https://doi.org/10.1063/1.120707" @default.
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