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W2037229112 abstract "In this paper, an AlGaN/GaN based MIS-HEMT using Al2O3 dielectric as gate insulator was fabricated. We adopted the patterned sapphire as the substrate (PSS) of high-quality AlGaN GaN epitaxial layers. We also studied the influence of different gate-drain space (L gd ) on breakdown voltage (V BD ) and on-state resistance (R on ) of GaN HEMT fabricated on patterned sapphire substrate. A breakdown voltage of 105 V was obtained with the L gd of 2 μm and gate width of 32 μm. The specific on resistance was 4.7 Ω·mm when L gd equals 0.5 μm. Meanwhile, it is found that the devices fabricated on the wet-etched pyramidal patterned sapphire substrate GaN exhibit better drive current stability than that of the devices on the conventional GaN-on-Sapphire substrate." @default.
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W2037229112 date "2014-10-01" @default.
W2037229112 modified "2023-10-01" @default.
W2037229112 title "Impact of geometric dimensions on the behavior of GaN MIS-HEMT fabricated on patterned sapphire substrate" @default.
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W2037229112 doi "https://doi.org/10.1109/icsict.2014.7021648" @default.
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