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- W2037252009 abstract "In this letter we report on the fabrication of Sb nanocrystals in SiO 2 film, for the first time. These nanocrystals were fabricated by ion implantation followed by thermal annealing. We confirmed their formation in SiO 2 via transmission electron microscopy (TEM) and energy dispersive X-ray (EDX) analysis. The size and depth of nanocrystals in film can be controlled by changing the implantation dose and energy. This fabrication method is completely compatible with large-scale integrated (LSI) device fabrication. Thus, it opens up the feasibility of using metal nanocrystals for creating new devices such as high-temperature single-electron devices." @default.
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- W2037252009 date "1997-11-01" @default.
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- W2037252009 title "Formation of Sb Nanocrystals in SiO2 Film Using Ion Implantation Followed by Thermal Annealing" @default.
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- W2037252009 doi "https://doi.org/10.1143/jjap.36.l1552" @default.
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