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- W2037310012 abstract "A method to decrease radiation damage to VLSI devices when using x-ray lithography is described. To decrease the x-ray radiation reaching the device SiO2 gates, an x-ray absorbing thin film is interposed between the resist and the device structure. Tungsten has been shown to meet all the requirements for the absorbing layer material. In particular, a RIE technique to obtain straight profiles in tungsten using a conventional CF4/O2 mixture is described in the paper. In addition, the dosimeter film technique utilized to calibrate the x-ray source is described in the appendix." @default.
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- W2037310012 date "1987-01-01" @default.
- W2037310012 modified "2023-09-27" @default.
- W2037310012 title "Thin film structure to reduce radiation damage in x-ray lithography" @default.
- W2037310012 doi "https://doi.org/10.1116/1.583876" @default.
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