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- W2037366060 abstract "In this review we first present the two classes of non-reactive and reactive surfactants effective during homoepitaxy and heteroepitaxy, respectively. We then describe and analyse the results obtained by “true” surfactant-mediated molecular-beam epitaxy (SM-MBE) of Ga1−xInxAs layers on GaAs substrates. Then, the data obtained by using In as a “virtual” surfactant during SM-MBE of InAs layers on AlxGa0.48−xIn0.52As/InP and GaAs substrates are presented. We finally provide evidence that the growth mode influences the resulting defect microstructure in (partially) relaxed layers." @default.
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- W2037366060 date "1995-05-01" @default.
- W2037366060 modified "2023-10-18" @default.
- W2037366060 title "Surfactant-mediated molecular-beam epitaxy of III–V strained-layer heterostructures" @default.
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- W2037366060 doi "https://doi.org/10.1016/0022-0248(95)80254-a" @default.
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