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- W2037449222 abstract "A comparison of structural and photoelectrieal properties of a third order twin boundary (Σ = 27) and a tetrajoint comprising this boundary is made. In contrast to the joint the boundary displayed structural instability. On annealing it faceted and dissociated forming lower energy defects: twin boundaries of first and second orders. The electrical properties of the boundaries and the joint are determined by following methods: light beam induced current (LBIC), photovoltage (PV), and spreading resistance (SB). The Σ = 27 boundary is found to be of high electrical activity in the symmetrical {552}/{552} and faceted (parallel to the plane {111} of one of the grains) orientations. Surface recombination velocities (s) equal 6.6 × 105 and 1.3 × 106 em s−1 at 300 K, respectively. The value s increases approximately twice during faceting which agrees with geometrical models for the Σ = 27 boundary in a diamond lattice. The electrical activity of the tetrajoint and the regions of the intersection of electrically inactive first order twin boundaries is revealed.Es wird ein Vergleich der strukturellen und photoelektrischen Eigenschaften einer Zwillingsgrenze dritter Ordnung (Σ = 27) und einer Vierfachbindung, die diese Grenze enthalt, durchgefuhrt. Im Gegensatz zur Bindung zeigt die Grenze eine strukturelle Instabilitat. Bei Temperung facettiert und dissoziiert sie und bildet Defekte niedrigerer Ordnung: Zwillingsgrenzen erster und zweiter Ordnung. Die elektrischen Eigenschaften der Grenzen und der Bindung weiden mit folgenden Methoden bestimmt: Lichtinduzierter Strom (LBIC), Photospannung (PV) und “spreading-resistance” (SR). Es wird gefunden, das die Σ = 27-Grenze in den Symmetrieorientierungen {552}/{552} und facettierten (parallel zur {111}-Ebene ernes der Korner) Orientierungen von hoher elektrischer Aktivitat ist. Die Oberflachenrekombinationsgeschwindigkeiten (s) betragen 6,6 × 105 bzw. 1,3 × 106 cm s−1 bei 300 K. Der Wert s nimmt wahrend der Facettierung naherungsweise um den Faktor zwei zu, was mit geometrischen Modellen fur die σ = 27-Grenze in einem Diamantgitter ubereinstimmt. Die elektrische Aktivitat der Vierfachbindung und der Bereiche der uberschneidung von elektrisch inaktiven Zwillingsgrenzen erster Ordnung wird aufgedeckt." @default.
- W2037449222 created "2016-06-24" @default.
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- W2037449222 date "1988-04-16" @default.
- W2037449222 modified "2023-09-24" @default.
- W2037449222 title "Structural and photoelectrical properties of a third-order twin boundary (Σ = 27) in silicon" @default.
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- W2037449222 doi "https://doi.org/10.1002/pssa.2211060205" @default.
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