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- W2037509358 abstract "We investigated the effect of post-oxidation annealing in wet O 2 and N 2 O ambient, following dry O 2 oxidation on the SiC MOS interfacial properties by using p-type MOS capacitors. The interfacial properties were dramatically improved by the introduction of hydrogen or nitrogen atoms into the SiO 2 /SiC interface, in each POA process. Notably, the N 2 O-POA process at 1200 °C or higher reduced the interface state density more effectively than the wet-O 2 -POA process, and offers a promising method to further improve the inversion channel mobility of p-channel SiC MOS devices." @default.
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- W2037509358 date "2012-05-01" @default.
- W2037509358 modified "2023-09-27" @default.
- W2037509358 title "Effect of Post-Oxidation Annealing in Wet O<sub>2</sub> and N<sub>2</sub>O Ambient on Thermally Grown SiO<sub>2</sub>/4H-SiC Interface for P-Channel MOS Devices" @default.
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- W2037509358 doi "https://doi.org/10.4028/www.scientific.net/msf.717-720.709" @default.
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