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- W2037549296 abstract "Silicon-supported and free-standing thin films of diamond have been used to fabricate photoconductive and photodiode structures for the detection of UV light. On free-standing (80 μm thick) material, a planar interdigitated design with 20-μm electrode spacings is found to offer unprecedented wavelength discrimination between deep UV and visible light, with dark currents < 0.1 nA, when a methane-air gas treatment is used. On silicon-supported (6 μm thick) films, a planar photodiode utilising gold Schottky and TiAgAu ohmic contacts also offers a sharp cut-off in photo-response in the deep UV with no measurable dark current; photoconductive devices fabricated on this material do not show useful levels of performance. The characteristics of each type of device are discussed." @default.
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- W2037549296 date "1996-05-01" @default.
- W2037549296 modified "2023-09-25" @default.
- W2037549296 title "Thin film diamond UV photodetectors: photodiodes compared with photoconductive devices for highly selective wavelength response" @default.
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- W2037549296 doi "https://doi.org/10.1016/0925-9635(95)00419-x" @default.
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