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- W2037644004 abstract "We propose a GaAs-based 1.3 µm InAs quantum dot (QD) structure for optical devices that uses dimeric arsenic (As 2 ) and a highly strained GaInAs cover layer. The characteristics of 1.3 µm InAs QDs that employ As 2 are different from those of QDs that use As 4 . Our optimum structure exhibits the first room temperature emission of over 1.3 µm with a linewidth of 22 meV and a high density of over 1 ×10 11 cm -2 using only a cover layer. We were also able to achieve a very high density of 3.3 ×10 11 cm -2 and a full width at half mazimum of 23 meV for a triple-stack structure within the critical thickness. This result is promising as regards achieving an optical device with QDs of over 1.3 µm on a GaAs substrate for use in fiber communications." @default.
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- W2037644004 date "2005-03-01" @default.
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- W2037644004 title "Highest Density 1.3 µm InAs Quantum Dots Covered with Gradient Composition InGaAs Strain Reduced Layer Grown with an As<sub>2</sub> Source Using Molecular Beam Epitaxy" @default.
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- W2037644004 doi "https://doi.org/10.1143/jjap.44.l432" @default.
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