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• W2037652806 abstract "Highly sensitive bio-field-effect transistor (bioFET) molecular sensors require optimized gate dielectrics for an efficient surface charge modulation of the semiconductor channel. Hafnium oxide has a dielectric constant at least four times greater than conventional gate dielectrics, increasing the potential bioFET sensitivity and permitting the use of a thicker dielectric layer to better protect the semiconductor surface. In this study, we demonstrate the stability of the capacitance response of atomic-layer-deposited dielectrics in aqueous electrolytes. We also verify the possibility of biotin functionalization of using photoelectron spectroscopy, capacitance–voltage analysis, and molecular atomic force microscopy imaging methods." @default.
• W2037652806 created "2016-06-24" @default.
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• W2037652806 date "2010-01-01" @default.
• W2037652806 modified "2023-09-25" @default.
• W2037652806 title "Atomic Layer Deposited Hafnium Oxide Gate Dielectrics for Charge-Based Biosensors" @default.
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• W2037652806 doi "https://doi.org/10.1149/1.3280224" @default.
• W2037652806 hasPublicationYear "2010" @default.
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