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- W2037659827 abstract "AlGaN/GaN metal?oxide?semiconductor heterostructure field-effect transistors (MOSHFETs) with 4 nm thick Al2O3 gate oxide were prepared and their performance was compared with that of AlGaN/GaN HFETs. The MOSHFETs yielded ~40% increase of the saturation drain current compared with the HFETs, which is larger than expected due to the gate oxide passivation. Despite a larger gate-channel separation in the MOSHFETs, a higher extrinsic transconductance than that of the HFETs was measured. The drift mobility of the MOSHFETs, evaluated on large-gate FET structures, was significantly higher than that of the HFETs. The zero-bias mobility for MOSHFETs and HFETs was 1950 cm2 V?1 s?1 and 1630 cm2 V?1 s?1, respectively. These features indicate an increase of the drift velocity and/or a decrease of the parasitic series resistance in the MOSHFETs. The current collapse, evaluated from pulsed I?V measurements, was highly suppressed in the MOSHFETs with 4 nm thick Al2O3 gate oxide. This result, together with the suppressed frequency dispersion of the capacitance, indicates that the density of traps in the Al2O3/AlGaN/GaN MOSHFETs was significantly reduced." @default.
- W2037659827 created "2016-06-24" @default.
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- W2037659827 date "2007-07-19" @default.
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- W2037659827 title "AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with 4 nm thick Al<sub>2</sub>O<sub>3</sub> gate oxide" @default.
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- W2037659827 doi "https://doi.org/10.1088/0268-1242/22/8/021" @default.
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