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• W2037667534 abstract "Ultrashort pulsed laser irradiation is used to crystallize 100-nm amorphous-silicon (a-Si) films. The crystallization process is ob- served by time-resolved pump-and-probe reflection imaging in the range of 0.2 ps to 100 ns. The in-situ images, in conjunction with postpro- cessed scanning electron microscopy (SEM) and atomic force micros- copy (AFM) mapping of the crystallized structure, provide evidence for nonthermal ultra-fast phase transition and subsequent surface-initiated crystallization. © 2003 Society of Photo-Optical Instrumentation Engineers." @default.
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• W2037667534 date "2003-11-01" @default.
• W2037667534 modified "2023-10-18" @default.
• W2037667534 title "Ultrafast laser-induced crystallization of amorphous silicon films" @default.
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• W2037667534 doi "https://doi.org/10.1117/1.1617312" @default.
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