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• W2037668422 abstract "Phosphorus- and boron-doped hydrogenated amorphous silicon thin films were prepared by the plasma-enhanced chemical vapor deposition method. As-deposited samples were thermally annealed at various temperatures to get nanocrystalline Si with sizes around 10 nm. X-ray photoelectron spectroscopy measurements demonstrated the presence of boron and phosphorus in the doped films. It is found that the nanocrystallization occurs at around 600 °C for the B-doped films, while it is around 700–800 °C for the P-doped samples. For the P-doped samples, the dark conductivity decreases at first and then increases with the annealing temperature. While for the B-doped samples, the dark conductivity monotonously increases with increasing annealing temperature. As a result, the carrier transport properties of both P- and B-doped nanocrystalline Si films are dominated by the gradual activation of dopants in the films. The conductivity reaches 22.4 and 193 S cm−1 for P- and B-doped sample after 1000 °C annealing." @default.
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• W2037668422 date "2011-05-01" @default.
• W2037668422 modified "2023-10-16" @default.
• W2037668422 title "Carrier transport of doped nanocrystalline Si formed by annealing of amorphous Si films at various temperatures" @default.
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• W2037668422 doi "https://doi.org/10.1016/j.ssc.2011.02.018" @default.
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