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• W2037671463 abstract "A novel electron spin resonance technique, spin-dependent recombination (SDR), permits extremely rapid, high-signal-to-noise-ratio electron spin resonance (ESR) measurements of electrically active radiation damage centers in (relatively) hard MOS transistors in integrated circuits. SDR was used to observe the radiation-induced buildup of P/sub bo/ and E' centers at relatively low concentration in individual MOSFETs in integrated circuits with" @default.
• W2037671463 created "2016-06-24" @default.
• W2037671463 creator A5011597387 @default.
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• W2037671463 date "1989-12-01" @default.
• W2037671463 modified "2023-10-13" @default.
• W2037671463 title "A spin dependent recombination study of radiation induced defects at and near the Si/SiO/sub 2/ interface" @default.
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• W2037671463 doi "https://doi.org/10.1109/23.45372" @default.
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