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- W2037680835 abstract "We report upconversion photoluminescence (UCPL) in GaAs/AlAs multiple quantum wells. UCPL from the AlAs barrier is caused by the resonant excitation of the excitons in the GaAs well. When the quantum well has sufficient miniband width, UCPL is hardly observed because of the small exciton oscillator strength. The excitation-energy and excitation-density dependences of UCPL intensity show the exciton resonant profile and a linear increase, respectively. These results demonstrate that the observed UCPL caused by the saturated two-step excitation process requires a large number of excitons." @default.
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- W2037680835 date "2014-11-03" @default.
- W2037680835 modified "2023-10-16" @default.
- W2037680835 title "Effect of exciton oscillator strength on upconversion photoluminescence in GaAs/AlAs multiple quantum wells" @default.
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- W2037680835 doi "https://doi.org/10.1063/1.4901080" @default.
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