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• W2037719758 abstract "We present a study on , , and various combinations of these in high-κ dielectric stacks together with . We use atomic layer deposition to fabricate ultrathin layers and laminates in the few-nanometer range at process temperatures of . By means of metal gate/high-κ oxide/semiconductor capacitors we evaluate these materials regarding their electrical properties and thermodynamic stability on silicon substrates. We observe that superior electrical characteristics are achieved if a thin layer of is sandwiched between two layers about thick. By this approach, hydroxylation of the La-containing oxides is suppressed, minimizing leakage currents as well as oxide and interface charges." @default.
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• W2037719758 date "2009-01-01" @default.
• W2037719758 modified "2023-10-14" @default.
• W2037719758 title "Lanthanum-Zirconate and Lanthanum-Aluminate Based High-κ Dielectric Stacks on Silicon Substrates" @default.
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• W2037719758 doi "https://doi.org/10.1149/1.3095475" @default.
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