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• W2037752059 endingPage "2014" @default.
• W2037752059 startingPage "2004" @default.
• W2037752059 abstract "One of the most important degradation effects observed in MNOS memory transistors is a negative shift of the threshold window. This negative shift is caused by a strong increase of the density of Si-SiO2 surface traps. This effect has been proposed to be caused by the same effect that is observed in MOS devices subjected to negative-bias stress (NBS). In this paper, a detailed study of the increase of the number of surface traps in MOS structures after NBS at temperatures (25–125 °C) and fields (400–700 MV/m) comparable to those used in MNOS devices is presented. Two different behaviors are observed. At low fields the surface-trap density increases as t1/4 and at high fields it increases linearly with the stress time t. The low-field behavior is temperature and field dependent and the zero-field activation energy is determined to be 0.3 eV. The high-field behavior is strongly field dependent but independent of temperature. A physical model is proposed to explain the surface-trap growth as being diffusion controlled at low fields and tunneling limited at high fields. A comparison with MNOS degradation is made and it was found to be related to the t1/4 behavior mentioned above." @default.
• W2037752059 created "2016-06-24" @default.
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• W2037752059 date "1977-05-01" @default.
• W2037752059 modified "2023-10-16" @default.
• W2037752059 title "Negative bias stress of MOS devices at high electric fields and degradation of MNOS devices" @default.
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• W2037752059 doi "https://doi.org/10.1063/1.323909" @default.
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