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• W2037762008 abstract "The authors investigate the solid phase epitaxial (SPE) regrowth and the substitutional solid solubility of silicon implanted with 119Sn to a dose of 1 * 1016 cm-2 at 250 keV, after furnace annealing, rapid thermal annealing and two-step annealing. It is shown that by means of two-step annealing one can reach a complete epitaxial regrowth of the amorphised layer, as well as a complete substitutional solid solution of the 119Sn impurity, to a concentration two orders of magnitude higher than the solid solubility limit, without any observable redistribution of the implanted concentration profile." @default.
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• W2037762008 date "1986-10-01" @default.
• W2037762008 modified "2023-09-27" @default.
• W2037762008 title "A channelling and conversion electron Mossbauer spectroscopy study of annealing behaviour of tin implanted silicon" @default.
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• W2037762008 doi "https://doi.org/10.1088/0268-1242/1/4/002" @default.
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