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• W2037819104 abstract "The present status in the development of diamond as electronic semiconductor material with wide band-gap (5.45 eV) is reviewed. Since diamond cannot be doped with shallow impurities, specific doping concepts and related diode and FET structures had to be developed, restricted to p-type boron doping. The results allow to predict that diamond high voltage switching diodes, high power RF FET sources and operation at high temperature will surpass the capability of devices designed in competing wide band-gap materials like SiC and GaN." @default.
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• W2037819104 date "2007-03-01" @default.
• W2037819104 modified "2023-10-18" @default.
• W2037819104 title "Concepts for diamond electronics" @default.
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• W2037819104 doi "https://doi.org/10.1016/j.tsf.2006.07.179" @default.
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