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- W2037914926 abstract "Abstract A new method has been developed by which the doping profile of the semiconductor can be obtained right up to its surface. Contrary to the well known dC/dV-method, which is valid only in the depletion range, we have considered the majority carriers in deriving relations for doping density as well as distance from the semiconductor surface, in terms of the space charge capacitance and its derivative with respect to the surface potential. This method can be realized experimentally on any MIS structure. Measurements on MOS capacitors with steam grown oxides showed a drooping profile towards the SiSiO2 interface for boron doped and a rising one for phosphorus doped silicon. Post-oxidation annealing in dry nitrogen at 1200°C produced a uniform profile for phosphorus doped silicon." @default.
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- W2037914926 date "1975-02-01" @default.
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- W2037914926 title "Determination of the semiconductor doping profile right up to its surface using the MIS capacitor" @default.
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- W2037914926 doi "https://doi.org/10.1016/0038-1101(75)90102-1" @default.
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