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• W2037978047 abstract "Metal-induced solid-phase crystallization of amorphous TiO2 thin films was investigated by introducing metal contact layers such as Ni or Cu between the TiO2 film and substrate. The crystallization temperature of TiO2 was found to be lowered by 30 °C (from ∼250 to ∼220 °C) with the use of a Ni contact layer. Based on the fact that part of the Ni atoms diffused to the surface of the crystallized TiO2 film, we proposed a reaction-assisted crystallization model in which an intermediate complex containing Ti-O and Ni-O bonds decomposes to crystallize TiO2 at a relatively low temperature." @default.
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• W2037978047 date "2012-07-30" @default.
• W2037978047 modified "2023-10-16" @default.
• W2037978047 title "Metal-induced solid-phase crystallization of amorphous TiO₂ thin films" @default.
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• W2037978047 doi "https://doi.org/10.1063/1.4739934" @default.
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