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• W2038001426 abstract "The initial growth kinetics for SiH4 chemical vapor deposition of Si on SiO2 at low temperature (500–600 °C) have been revealed using rapid thermal UHV-CVD, together with in situ H2 thermal desorption spectroscopy to titrate the amount of exposed Si surface. In the few mTorr pressure range, the reaction is heterogeneous, i.e., dominated by surface reaction. Below ∼0.7 monolayer Si coverage, the growth kinetics is rapid (∼t4), indicating spontaneous generation of new nuclei, while at higher coverage Si island growth dominates." @default.
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• W2038001426 date "1992-12-21" @default.
• W2038001426 modified "2023-09-23" @default.
• W2038001426 title "Kinetics of nucleation and growth of Si on SiO₂in very low pressure SiH₄chemical vapor deposition" @default.
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• W2038001426 doi "https://doi.org/10.1063/1.108001" @default.
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