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- W2038045679 endingPage "075007" @default.
- W2038045679 startingPage "075007" @default.
- W2038045679 abstract "Gallium and aluminum co-doped ZnO (GAZO) thin films were deposited on glass substrate by using a facing targets sputtering system under various oxygen atmosphere, and the effect of oxygen on their structural, optical and electrical properties was investigated. All as-deposited GAZO thin films under oxygen atmosphere exhibited smooth surface and the lowest value of root-mean-square was 0.6 nm at oxygen 1 sccm, this value is lower than that of film deposited at pure argon atmosphere. The (0 0 2) peak intensity was increased with increase in oxygen flow rate, the peak maximized at oxygen 1 sccm. All films indicated high transmittance above 85% in the visible range and the lowest resistivity of 8.9 × 10−4 Ω · cm was obtained at pure argon atmosphere." @default.
- W2038045679 created "2016-06-24" @default.
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- W2038045679 creator A5050816407 @default.
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- W2038045679 date "2014-04-28" @default.
- W2038045679 modified "2023-09-28" @default.
- W2038045679 title "Investigation of the effect of oxygen gas on properties of GAZO thin films fabricated by facing targets sputtering system" @default.
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- W2038045679 doi "https://doi.org/10.1088/0268-1242/29/7/075007" @default.
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