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• W2038221372 abstract "The polarization-doped N-face blue InGaN/GaN light-emitting diodes (LEDs) with different Al content in the p-type graded AlxGa1−xN layers are investigated numerically, and the polarization-doped Ga-face LED with the same structure is simultaneously simulated for comparison. The proposed N-face LEDs with low content in the graded AlxGa1−xN layer exhibit significant improvement for the light output power and hole injection efficiency at high applied voltages compared with the Ga-face counterpart. The enhanced performance for the N-face polarization-doped LEDs is explained by the simulated energy band diagrams, distribution of electric field, carrier concentration and radiative recombination rate in the quantum wells." @default.
• W2038221372 created "2016-06-24" @default.
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• W2038221372 date "2015-01-01" @default.
• W2038221372 modified "2023-10-06" @default.
• W2038221372 title "Design analysis of polarization-doped N-face InGaN/GaN light-emitting diodes with different AlxGa1−xN graded layers" @default.
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• W2038221372 doi "https://doi.org/10.1016/j.mssp.2014.07.021" @default.
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