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• W2038394792 abstract "We prepared porous silicon samples coated by continuous palladium layer in electroless process. Scanning electron microscopy (SEM) showed cauliflower-shape Pd clusters on the surface. I–V curves of Schottky like Pd/porous Si samples were measured in air and in hydrogen. These measurements showed a metal–interface–semiconductor configuration rather than an ideal Schottky diode. Variations of the electrical current in the presence of diluted hydrogen at room temperature revealed that the samples can sense hydrogen in a wide range of concentration (100–40,000 ppm) without any saturation behavior. Hydrogen sensing properties of these samples were investigated at room temperature for a duration of nine months. Sample sensitivity (response time) decreased (increased) to a saturated value after 45 days. We discussed sensing and Schottky contact properties of the fresh and aged Pd/porous Si samples by variation of structure and chemical composition using SEM, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) data." @default.
• W2038394792 created "2016-06-24" @default.
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• W2038394792 date "2010-04-08" @default.
• W2038394792 modified "2023-10-01" @default.
• W2038394792 title "Investigation of hydrogen sensing properties and aging effects of Schottky like Pd/porous Si" @default.
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• W2038394792 doi "https://doi.org/10.1016/j.snb.2010.01.047" @default.
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