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- W2038480618 abstract "We fabricated selective photodetectors on the basis of graded-gap GaAlAs/GaAs heterostructures and quantumconfined GaInN/GaN structures. At k ¼ kmax the monochromatic photosensitivity is in the range of 0.1–0.7 A/W (GaAlAs/GaAs), 0.15 A/W (GaInN/GaN). The methods are developed for control over the photosensitivity band width and its energy position in the 0.35–1.1 lm by varying technological factors (such as gap gradient, spacing between the metallurgical boundary and p–n junction, minority charge carrier diffusion length). 2002 Published by Elsevier Science Ltd." @default.
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- W2038480618 date "2003-03-01" @default.
- W2038480618 modified "2023-10-02" @default.
- W2038480618 title "Selective photodetectors based on GaAlAs/GaAs and GaN/GaInN heterostructures" @default.
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- W2038480618 doi "https://doi.org/10.1016/s0038-1101(02)00418-5" @default.
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