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- W2038534575 abstract "A significant range of step coverages can be realized in the low pressure chemical vapor deposition of blanket tungsten films by either hydrogen reduction or silane reduction of tungsten hexafluoride, at a specified deposition rate. The step coverage realized in a single-wafer reactor (SWR) depends on the operating conditions used, e.g. feed flow rate ratios and reactant conversion level. The pseudosteady state approximation to the diffusion-reaction model is used to select the partial pressure ratios at the wafer surface which lead to a balance between reactant availability and consumption. The complete transient model is then used to demonstrate that the reactant pressure ratio obtained using this “availability analysis” maximizes the step coverage at a specified deposition rate. The reactant pressure ratio at the feature mouth is related to the inlet feed rate ratio and reactor conversion level for an SWR, assuming a well-mixed reactor. Guidelines for SWR operation are given to obtain the maximum step coverage for each system. In well-mixed reactors, the optimum feed ratio is a linear function of conversion, and approaches the stoichiometric ratio as the conversion approaches unity." @default.
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- W2038534575 date "1990-01-01" @default.
- W2038534575 modified "2023-09-24" @default.
- W2038534575 title "Maximizing step coverage during blanket tungsten low pressure chemical vapor deposition" @default.
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- W2038534575 doi "https://doi.org/10.1016/s0040-6090(05)80011-2" @default.
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