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- W2038545810 abstract "Abstract Aggregation of photoproduced vacancies in a crystal in the course of irradiation is considered with allowance for recombination with interstitials simultaneously generated in the same amount. The vacancy–interstitial recombination essentially slows down the growth of vacancy clusters (pores). Therefore, the growth of pores is conditioned by outflow of interstitials. Under certain conditions, dislocations act as main sinks for interstitials. Near dislocations, pores grow fast, suppressing the growth of pores in the rest of the crystal volume. This gives rise to various growth modes depending on the ratio between the densities of dislocations and pores. For a high density of pores or a low density of dislocations, pores grow only near dislocations which can result in annihilation of the rest of pores and in a decrease of their total surface (the effect of radiation annealing). In the opposite case, pores grow almost uniformly. The fraction of photoproduced vacancies, accumulated in the form of pores, varies by several orders of magnitude depending on the dislocation-to-pore density ratio." @default.
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- W2038545810 date "2000-08-01" @default.
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- W2038545810 title "Role of dislocations in aggregation of photoproduced vacancies in crystals" @default.
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