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• W2038552020 abstract "We experimentally study the tunneling magnetoresistance (TMR) effect as a function of bias voltage $({V}_{mathrm{SD}})$ in lateral $mathrm{Ni}∕mathrm{In}mathrm{As}∕mathrm{Ni}$ quantum-dot (QD) spin valves showing Coulomb blockade characteristics. With varying ${V}_{mathrm{SD}}$, the TMR value oscillates and the oscillation period corresponds to conductance changes observed in the current-voltage $(Itext{ensuremath{-}}{V}_{mathrm{SD}})$ characteristics. We also find an inverse TMR effect near ${V}_{mathrm{SD}}$ values where negative differential conductance is observed. A possible mechanism of the TMR oscillation is discussed in terms of spin accumulation on the QD and spin-dependent transport properties via excited states." @default.
• W2038552020 created "2016-06-24" @default.
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• W2038552020 date "2008-02-07" @default.
• W2038552020 modified "2023-09-30" @default.
• W2038552020 title "Oscillatory changes in the tunneling magnetoresistance effect in semiconductor quantum-dot spin valves" @default.
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• W2038552020 doi "https://doi.org/10.1103/physrevb.77.081302" @default.
• W2038552020 hasPublicationYear "2008" @default.
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