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- W2038615722 abstract "Wide-bandgap GaN-based avalanche photodetectors (APDs) are important for photodetectors operating in UV spectralregion. For the growth of GaN-based heteroepitaxial layers on lattice-mismatched substrates such as sapphire and SiC, ahigh density of defects is introduced, thereby causing device failure by premature microplasma breakdown before theelectric field reaches the level of the bulk avalanche breakdown field, which has hampered the development of III-nitridebased APDs. In this study, we investigate the growth and characterization of GaN and AlGaN-based APDs on bulk GaNand AlN substrates. Epitaxial layers of GaN and AlxGa1-xN p-i-n ultraviolet avalanche photodiodes were grown bymetalorganic chemical vapor deposition (MOCVD). Improved crystalline and structural quality of epitaxial layers wasachieved by employing optimum growth parameters on low-dislocation-density bulk substrates in order to minimize thedefect density in epitaxially grown materials. GaN and AlGaN APDs were fabricated into 30μm- and 50μm-diametercircular mesas and the electrical and optoelectronic characteristics were measured. APD epitaxial structure and devicedesign, material growth optimization, material characterizations, device fabrication, and device performancecharacteristics are reported." @default.
- W2038615722 created "2016-06-24" @default.
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- W2038615722 date "2007-10-05" @default.
- W2038615722 modified "2023-09-23" @default.
- W2038615722 title "High-performance GaN and Al x Ga 1-x N ultraviolet avalanche photodiodes grown by MOCVD on bulk III-N substrates" @default.
- W2038615722 doi "https://doi.org/10.1117/12.738505" @default.
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