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• W2038648294 abstract "In this paper we propose a strategy to achieve monolithic integration of III-Vs on Si for photonic integration through a simple process. By mimicking the SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> /Si/SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> waveguide necessary to couple light from the gain medium on its top, we adopt a ~2 μm thick silicon dioxide mask for epitaxial lateral overgrowth (ELOG) of InP on Si. The ELOG InP layer as wells as the subsequently grown quantum wells (~1. 55 μm) have been analyzed by photoluminescence and transmission electron microscopy and found to have high optical quality and very good interface. The studies are strategically important for a monolithic platform that holds great potential in addressing the future need to have an integrated platform consisting of both III-Vs and Si on same chip." @default.
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• W2038648294 date "2014-07-01" @default.
• W2038648294 modified "2023-09-30" @default.
• W2038648294 title "Simple Epitaxial Lateral Overgrowth Process as a Strategy for Photonic Integration on Silicon" @default.
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• W2038648294 doi "https://doi.org/10.1109/jstqe.2013.2294453" @default.
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