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• W2038794292 abstract "p-channel metal oxide semiconductor field-effect transistor (pMOSFET) devices with a ternary Hf x Mo y N z metal gate and a Gd 2 O 3 high- k gate dielectric have been demonstrated for the first time. The nitrogen-concentration-control method is a simple and cost-effective technique for metal work-function modulation. Hf x Mo y N z thin films were cosputtered from pure hafnium (Hf) and molybdenum (Mo) targets in nitrogen (N 2 ) and argon (Ar) mixtures. The Hf x Mo y N z thin films have low resistivity and high thermal stability up to 950 °C. The threshold voltage ( V th ) of the Hf x Mo y N z /Gd 2 O 3 pMOSFET can be tuned from -0.6 to -0.08 V by controlling the nitrogen flow ratio. Moreover, there is little negative bias temperature instability (NBTI) degradation of the Hf x Mo y N z /Gd 2 O 3 pMOSFET device. Compared with the Hf x Mo y N z /SiO 2 pMOSFET, the Hf x Mo y N z /Gd 2 O 3 pMOSFET has a small threshold voltage modulation owing to the extrinsic Fermi level effect at the Hf x Mo y N z and Gd 2 O 3 interface. A physical model has been proposed to explain the extrinsic Fermi level pinning effect of the Hf x Mo y N z /Gd 2 O 3 pMOSFET device." @default.
• W2038794292 created "2016-06-24" @default.
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• W2038794292 date "2010-04-01" @default.
• W2038794292 modified "2023-09-26" @default.
• W2038794292 title "Threshold Voltage Tunability of p-Channel Metal Oxide Semiconductor Field-Effect Transistor with Ternary Hf_xMo_yN_z Metal Gate and Gd₂O₃ High-k Gate Dielectric" @default.
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• W2038794292 doi "https://doi.org/10.1143/jjap.49.04da15" @default.
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