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• W2038817525 abstract "Effect of the oxygen flow rate for active-layer deposition on the thermal stability of amorphous InGaZnO thin film transistors (a-IGZO TFTs) was investigated. The transfer characteristics of a-IGZO TFTs were measured at temperatures ranging from 298 to 398 K and a simple analytical model was used to relate the threshold voltage $({rm V}_{rm th})$ decrease with increasing temperature to the formation of the point defects in a-IGZO films. Lower oxygen flow rate for active-layer deposition was proved to improve the thermal stability of a-IGZO TFTs, as was confirmed to be due to the increase in defect formation energy with the oxygen flow rate decreasing by the related theoretical analysis and XPS measurements." @default.
• W2038817525 created "2016-06-24" @default.
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• W2038817525 date "2015-07-01" @default.
• W2038817525 modified "2023-10-17" @default.
• W2038817525 title "Thermal Stability of Amorphous InGaZnO Thin-Film Transistors With Different Oxygen-Contained Active Layers" @default.
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• W2038817525 doi "https://doi.org/10.1109/jdt.2015.2421934" @default.
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