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• W2038821454 endingPage "1524" @default.
• W2038821454 startingPage "1520" @default.
• W2038821454 abstract "Ge nanocrystals were produced in 4H–SiC by implantation of 250 keV Ge+ ions with a dose of 1×1016 cm−2 and subsequent rapid thermal annealing at 1400–1600 °C. Radiation damage and Ge distribution after implantation and annealing were analyzed by Rutherford backscattering spectrometry, cross-sectional transmission electron microscopy methods, and x-ray diffraction. After ion implantation a significant amount of Ge is incorporated into the SiC lattice and Ge nanocrystallites were not found. Thermal annealing leads to a local Ge redistribution and both Ge-rich and Ge nanocrystals are detected after annealing. The size of the nanocrystals varies between 2 and 10 nm." @default.
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• W2038821454 date "2002-02-01" @default.
• W2038821454 modified "2023-10-18" @default.
• W2038821454 title "Nanocrystal formation in SiC by Ge ion implantation and subsequent thermal annealing" @default.
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• W2038821454 doi "https://doi.org/10.1063/1.1430539" @default.
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