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• W2038827128 abstract "Planar field effect transistors (FET) consisting of a large number of parallel single-walled carbon nanotubes (SWCNT) have been fabricated that allow very high on-currents of the order of several milliamperes and on/off ratios exceeding 500. With these devices it is demonstrated, for the first time, that SWCNTs can be used as transistors to control macroscopic devices, e.g., light emitting diodes and electromotors. Those transistors were fabricated by a very simple process that is based on the catalytic chemical vapor deposition (CCVD) growth of SWCNTs at low temperatures, a single lithographic step to define the source and drain contacts, and a bias pulse to eliminate the metallic SWCNTs." @default.
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• W2038827128 date "2004-04-10" @default.
• W2038827128 modified "2023-10-14" @default.
• W2038827128 title "High-Current Nanotube Transistors" @default.
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• W2038827128 doi "https://doi.org/10.1021/nl049776e" @default.
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