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• W2038861608 abstract "Highly scaled AlN/GaN metal-oxide-semiconductor heterojunction field-effect transistors (MOS-HFETs) with Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> gate dielectrics of varying thicknesses deposited by atomic layer deposition (ALD) were fabricated, and their performance was compared with Schottky-barrier HFETs (SB-HFETs). MOS-HFETs with an ultrathin 2-nm-thick Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> dielectric and a gate length of 40 nm had direct-current (dc) and radio-frequency (RF) performances similar to the SB-HFETs, with a high extrinsic transconductance of 415 mS/mm, <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>f</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>T</sub> of 134 GHz, and <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>f</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>max</sub> of 261 GHz. In contrast, the dc and RF performances of a MOS-HFET with a 4-nm-thick Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> dielectric were degraded by short-channel effects. The 2-nm-thick Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> gate insulator reduced the forward-bias gate current by more than two orders of magnitude. The data suggest the promise of ultrathin ALD Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> gate dielectrics for next-generation high-speed GaN HFETs." @default.
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• W2038861608 date "2011-08-01" @default.
• W2038861608 modified "2023-10-09" @default.
• W2038861608 title "High-Speed AlN/GaN MOS-HFETs With Scaled ALD $ hbox{Al}_{2}hbox{O}_{3}$ Gate Insulators" @default.
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• W2038861608 doi "https://doi.org/10.1109/led.2011.2155616" @default.
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